%0 Journal Article %1 schreyeck2013molecular %A Schreyeck, S %A Tarakina, N. V. %A Karczewski, G %A Schumacher, C %A Borzenko, T %A Brüne, C %A Buhmann, H %A Gould, C %A Brunner, K %A Molenkamp, L. W. %B Applied Physics Letters %D 2013 %I American Institute of Physics %J Appl. Phys. Lett. %K qt %N 4 %P 041914-- %R 10.1063/1.4789775 %T Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates %V 102 %X Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Δω=13 arc sec, and the (ω−2θ) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy.

@article{schreyeck2013molecular, abstract = {Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Δω=13 arc sec, and the (ω−2θ) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy.}, added-at = {2019-08-12T17:44:47.000+0200}, author = {Schreyeck, S and Tarakina, N. V. and Karczewski, G and Schumacher, C and Borzenko, T and Brüne, C and Buhmann, H and Gould, C and Brunner, K and Molenkamp, L. W.}, biburl = {https://www.bibsonomy.org/bibtex/29faca889f1407f544391386918655cee/ep3qt}, booktitle = {Applied Physics Letters}, comment = {doi: 10.1063/1.4789775}, doi = {10.1063/1.4789775}, interhash = {433be35cb410c0446bc1b6e8ca9561a6}, intrahash = {9faca889f1407f544391386918655cee}, issn = {00036951}, journal = {Appl. Phys. Lett.}, keywords = {qt}, month = {1}, number = 4, pages = {041914--}, publisher = {American Institute of Physics}, timestamp = {2019-08-12T17:44:47.000+0200}, title = {Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates}, volume = 102, year = 2013 }