%0 Journal Article %1 journals/tvlsi/YangHC11 %A Yang, Hao-I %A Hwang, Wei %A Chuang, Ching-Te %D 2011 %J IEEE Trans. Very Large Scale Integr. Syst. %K dblp %N 7 %P 1192-1204 %T Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices. %U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi19.html#YangHC11 %V 19

@article{journals/tvlsi/YangHC11, added-at = {2020-03-11T00:00:00.000+0100}, author = {Yang, Hao-I and Hwang, Wei and Chuang, Ching-Te}, biburl = {https://www.bibsonomy.org/bibtex/23f0f274e29aebe6eeb07f6bb7363f373/dblp}, ee = {https://doi.org/10.1109/TVLSI.2010.2049038}, interhash = {4a1731057471ac291451464231e6c212}, intrahash = {3f0f274e29aebe6eeb07f6bb7363f373}, journal = {IEEE Trans. Very Large Scale Integr. Syst.}, keywords = {dblp}, number = 7, pages = {1192-1204}, timestamp = {2020-03-12T11:45:34.000+0100}, title = {Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices.}, url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi19.html#YangHC11}, volume = 19, year = 2011 }