Inproceedings,

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

, , , , , , , , , , , , , , , , , and .
IRPS, page 51-1. IEEE, (2022)

Meta data

Tags

Users

  • @dblp

Comments and Reviews