%0 Journal Article %1 wittmann2010circular %A Wittmann, B %A Danilov, S N %A Bel'kov, V V %A Dvoretsky, S A %A Vinh, N Q %A van der Meer, A F G %A Murdin, B %A Ganichev, S D %A Tarasenko, S A %A Novik, E G %A Buhmann, H %A Brüne, C %A Molenkamp, L W %A Kvon, Z D %A Mikhailov, N N %D 2010 %J Semiconductor Science and Technology %K qt %P 095005 %R 10.1088/0268-1242/25/9/095005 %T Circular photogalvanic effect in HgTe/CdHgTe quantum well structures %V 25 %X We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.

@article{wittmann2010circular, abstract = {We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.}, added-at = {2019-08-12T18:23:52.000+0200}, author = {Wittmann, B and Danilov, S N and Bel'kov, V V and Dvoretsky, S A and Vinh, N Q and van der Meer, A F G and Murdin, B and Ganichev, S D and Tarasenko, S A and Novik, E G and Buhmann, H and Brüne, C and Molenkamp, L W and Kvon, Z D and Mikhailov, N N}, biburl = {https://www.bibsonomy.org/bibtex/2145f4270506a8ea0dc9ba9dafad4e733/ep3qt}, doi = {10.1088/0268-1242/25/9/095005}, interhash = {52ef0158d073a1a958fd5bd39042cdcf}, intrahash = {145f4270506a8ea0dc9ba9dafad4e733}, journal = {Semiconductor Science and Technology}, keywords = {qt}, month = {11}, pages = 095005, timestamp = {2019-08-12T18:23:52.000+0200}, title = {Circular photogalvanic effect in HgTe/CdHgTe quantum well structures}, volume = 25, year = 2010 }