%0 Conference Paper %1 conf/essderc/ArithUVOWO18 %A Arith, Faiz %A Urrcsti, Jesus %A Vasilevskiy, Konstantin %A Oisenl, Sarah %A Wright, Nick %A O'Neill, Anthony %B ESSDERC %D 2018 %I IEEE %K dblp %P 30-33 %T High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack. %U http://dblp.uni-trier.de/db/conf/essderc/essderc2018.html#ArithUVOWO18 %@ 978-1-5386-5401-9

@inproceedings{conf/essderc/ArithUVOWO18, added-at = {2021-10-14T00:00:00.000+0200}, author = {Arith, Faiz and Urrcsti, Jesus and Vasilevskiy, Konstantin and Oisenl, Sarah and Wright, Nick and O'Neill, Anthony}, biburl = {https://www.bibsonomy.org/bibtex/299da7ea29230c9463eb0494ba37a37c1/dblp}, booktitle = {ESSDERC}, crossref = {conf/essderc/2018}, ee = {https://doi.org/10.1109/ESSDERC.2018.8486896}, interhash = {1684b9026bda598e2452bff30a503ecb}, intrahash = {99da7ea29230c9463eb0494ba37a37c1}, isbn = {978-1-5386-5401-9}, keywords = {dblp}, pages = {30-33}, publisher = {IEEE}, timestamp = {2024-04-10T10:01:29.000+0200}, title = {High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack.}, url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2018.html#ArithUVOWO18}, year = 2018 }