%0 Journal Article %1 Shekhar_2022 %A Shekhar, Pragya %A Shamim, Saquib %A Hartinger, Simon %A Schlereth, Raimund %A Hock, Volkmar %A Buhmann, Hartmut %A Kleinlein, Johannes %A Molenkamp, Laurens W. %D 2022 %I American Chemical Society (ACS) %J ACS Applied Materials &amp$\mathsemicolon$ Interfaces %K qt %N 29 %P 33960--33967 %R 10.1021/acsami.2c06176 %T Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications %V 14 %X We present a novel low-temperature (30 °C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving selflimiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.6 Å per cycle and an atomic ratio of Hf/O of 1:1.85. In addition, we report on the transport properties of the microstructured devices, which are much enhanced compared to previous device generations. We determine a relative permittivity of ∼15 for our HfO2 layers. Our process considerably reduces the thermal load of the samples during microfabrication and can be adapted to a broad range of materials, enabling the fabrication of high-quality gate insulators on various temperaturesensitive materials.

@article{Shekhar_2022, abstract = {We present a novel low-temperature (30 °C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving selflimiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.6 Å per cycle and an atomic ratio of Hf/O of 1:1.85. In addition, we report on the transport properties of the microstructured devices, which are much enhanced compared to previous device generations. We determine a relative permittivity of ∼15 for our HfO2 layers. Our process considerably reduces the thermal load of the samples during microfabrication and can be adapted to a broad range of materials, enabling the fabrication of high-quality gate insulators on various temperaturesensitive materials.}, added-at = {2023-03-27T11:05:41.000+0200}, author = {Shekhar, Pragya and Shamim, Saquib and Hartinger, Simon and Schlereth, Raimund and Hock, Volkmar and Buhmann, Hartmut and Kleinlein, Johannes and Molenkamp, Laurens W.}, biburl = {https://www.bibsonomy.org/bibtex/2c812a921da6a64e2d2d0f96ad15fd474/ep3qt}, doi = {10.1021/acsami.2c06176}, interhash = {80e1008334ae0c1d1c117893fbe7d4bb}, intrahash = {c812a921da6a64e2d2d0f96ad15fd474}, journal = {{ACS} Applied Materials {\&}amp$\mathsemicolon$ Interfaces}, keywords = {qt}, month = {07}, number = 29, pages = {33960--33967}, publisher = {American Chemical Society ({ACS})}, timestamp = {2023-03-27T11:05:41.000+0200}, title = {Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications}, volume = 14, year = 2022 }