%0 Journal Article %1 journals/tcad/AnholtS89 %A Anholt, Robert %A Sigmon, Thomas W. %D 1989 %J IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. %K dblp %N 4 %P 350-359 %T A process and device model for GaAs MESFET technology: GATES. %U http://dblp.uni-trier.de/db/journals/tcad/tcad8.html#AnholtS89 %V 8

@article{journals/tcad/AnholtS89, added-at = {2020-09-24T00:00:00.000+0200}, author = {Anholt, Robert and Sigmon, Thomas W.}, biburl = {https://www.bibsonomy.org/bibtex/2cd47ff7ed86f8042df6effd9c39beb8a/dblp}, ee = {https://doi.org/10.1109/43.29589}, interhash = {83cf1798743e6794b52c1ea45d289b79}, intrahash = {cd47ff7ed86f8042df6effd9c39beb8a}, journal = {IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.}, keywords = {dblp}, number = 4, pages = {350-359}, timestamp = {2020-09-25T11:50:32.000+0200}, title = {A process and device model for GaAs MESFET technology: GATES.}, url = {http://dblp.uni-trier.de/db/journals/tcad/tcad8.html#AnholtS89}, volume = 8, year = 1989 }