Article,

Changes in the Structure, Magnetization, and Resistivity of BaFe12-xTixO19

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ACS APPLIED ELECTRONIC MATERIALS, 3 (4): 1583-1593 (2021)
DOI: 10.1021/acsaelm.0c01081

Abstract

BaFe12-xTixO19 hexaferrites up to x = 2.00 were fabricated in an ordinary ceramic way. Crystal structure parameters were isothermally defined at 300 K from the powder XRD by the Rietveld technique. The cell constants have nonmonotonic concentration dependence with a local minimum of a similar to 5.886 angstrom and V similar to 698.75 angstrom(3) at x = 1.00. The occupation mechanism of the titanium cations is confirmed. The Mossbauer investigation confirms such localization of Ti4+. Magnetization vs field measurements were realized at 300 K. The law of approach to saturation (LAS) was applied to determine the magnetic loop characteristics. These values decrease almost monotonically with an increase in titanium concentration and temperature. The minimum magnetic values were obtained for x = 2.00 at 300 K. Ac resistivity had a nonmonotonic growth dependence. Minimum ac resistivity was fixed for x = 0.50 at 300 K. As the frequency increases, the ac resistivity decreases, as the value of the band gap. The real part of permittivity epsilon' rises constantly with increasing temperature and falls with frequency increase for all of the compositions. Changes in the structure, magnetization, and ac resistivity of BaFe12-xTixO19 were made on the basis of changing charged states of iron ions and the occupation mechanism by titanium ions.

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