%0 Conference Paper %1 conf/smacd/ZhangLHFB19 %A Zhang, Feng %A Li, Linan %A Huo, Qiang %A Fang, Cong %A Ba, Wenqiang %B SMACD %D 2019 %I IEEE %K dblp %P 209-212 %T A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs. %U http://dblp.uni-trier.de/db/conf/smacd/smacd2019.html#ZhangLHFB19 %@ 978-1-7281-1201-5

@inproceedings{conf/smacd/ZhangLHFB19, added-at = {2024-05-06T00:00:00.000+0200}, author = {Zhang, Feng and Li, Linan and Huo, Qiang and Fang, Cong and Ba, Wenqiang}, biburl = {https://www.bibsonomy.org/bibtex/26aaabb8c8a8e2d6e53019a55d9bca47d/dblp}, booktitle = {SMACD}, crossref = {conf/smacd/2019}, ee = {https://doi.org/10.1109/SMACD.2019.8795257}, interhash = {957688f58621f588d3dabc7301b3f255}, intrahash = {6aaabb8c8a8e2d6e53019a55d9bca47d}, isbn = {978-1-7281-1201-5}, keywords = {dblp}, pages = {209-212}, publisher = {IEEE}, timestamp = {2024-05-13T08:46:08.000+0200}, title = {A Fluctuation Model of a Hf02 RRAM Cell for Memory Circuit Designs.}, url = {http://dblp.uni-trier.de/db/conf/smacd/smacd2019.html#ZhangLHFB19}, year = 2019 }