We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is va...
Description
Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide: Journal of Applied Physics: Vol 115, No 13
%0 Journal Article
%1 hain2014excitation
%A Hain, T. C.
%A Fuchs, F
%A Soltamov, V. A.
%A Baranov, P. G.
%A Astakhov, G. V.
%A Hertel, T
%A Dyakonov, V
%B Journal of Applied Physics
%D 2014
%I American Institute of Physics
%J Journal of Applied Physics
%K PL SiC myown
%N 13
%P 133508--
%R 10.1063/1.4870456
%T Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
%U https://doi.org/10.1063/1.4870456
%V 115
%X We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is va...
@article{hain2014excitation,
abstract = {We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is va...},
added-at = {2021-01-13T15:03:14.000+0100},
author = {Hain, T. C. and Fuchs, F and Soltamov, V. A. and Baranov, P. G. and Astakhov, G. V. and Hertel, T and Dyakonov, V},
biburl = {https://www.bibsonomy.org/bibtex/218a2aacb234177a6767c217f66def7b5/hertel-group},
booktitle = {Journal of Applied Physics},
comment = {doi: 10.1063/1.4870456},
description = {Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide: Journal of Applied Physics: Vol 115, No 13},
doi = {10.1063/1.4870456},
interhash = {9c3265615d4783ab03ac202a582b8bdd},
intrahash = {18a2aacb234177a6767c217f66def7b5},
issn = {00218979},
journal = {Journal of Applied Physics},
keywords = {PL SiC myown},
month = apr,
number = 13,
pages = {133508--},
publisher = {American Institute of Physics},
timestamp = {2021-01-27T09:12:10.000+0100},
title = {Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide},
url = {https://doi.org/10.1063/1.4870456},
volume = 115,
year = 2014
}