%0 Conference Paper %1 conf/iceee/GardunoCE11 %A Garduño, Salvador Ivan %A Cerdeira, Antonio %A Estrada, Magali %B CCE %D 2011 %I IEEE %K dblp %P 1-5 %T Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. %U http://dblp.uni-trier.de/db/conf/iceee/iceee2011.html#GardunoCE11

@inproceedings{conf/iceee/GardunoCE11, added-at = {2023-11-10T00:00:00.000+0100}, author = {Garduño, Salvador Ivan and Cerdeira, Antonio and Estrada, Magali}, biburl = {https://www.bibsonomy.org/bibtex/2c370c60be9d0e97f40202bbc79cd0373/dblp}, booktitle = {CCE}, crossref = {conf/iceee/2011}, ee = {https://doi.org/10.1109/ICEEE.2011.6106668}, interhash = {ab23541122800594c85fa9533d09f6ac}, intrahash = {c370c60be9d0e97f40202bbc79cd0373}, keywords = {dblp}, pages = {1-5}, publisher = {IEEE}, timestamp = {2024-04-10T13:04:39.000+0200}, title = {Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs.}, url = {http://dblp.uni-trier.de/db/conf/iceee/iceee2011.html#GardunoCE11}, year = 2011 }