Abstract
A silicon carbide member is manufactured by depositing a silicon carbide
coating on a substrate of silicon carbide containing free silicon
by chemical vapor deposition. By gradually reducing the content of
free silicon of the coating such that the coating is made of silicon
carbide containing free silicon at the interface with the substrate,
but of silicon carbide containing no free silicon at the outer surface,
the coating is firmly bonded to the substrate, undergoes little thermal
stress and is resistant against cracking and separation upon thermal
cycling. The member is suitable for use in the heat treatment of
semiconductor elements.
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