Abstract
We used low-energy electron microscopy (LEEM) and scanning tunneling
microscopy (STM) to investigate domain structures of epitaxial few-layer
graphene grown on SiC(0001). Dark-field (DF) LEEM images formed using
(10) and (01) beams clearly indicate that bilayer graphene consists
of two types of domains, which have threefold symmetry and are rotated
by 180° with respect to each other. The DF LEEM images show clear
domain contrasts at energies where (10)- and (01)-beam intensities
calculated for bulk graphite are largely different. This means that
the two types of domains are different in stacking: AB and AC stackings.
The stacking domains are also supported by the STM images of bilayer
graphene showing both hexagonal and honeycomb patterns.
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