Article,
X-ray multiple diffraction in Renninger scanning mode: Simulation of data recorded using synchrotron radiation
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 29 (4): 325-330 (1996)
DOI: 10.1107/S0021889896001641
Abstract
The application limit of the MULTX program for predicting
Renninger-scanning X-ray multiple diffraction data is extended in order
to simulate Renninger scans for semiconductor single-crystal and
heteroepitaxial structures recorded using synchrotron radiation. The
experimental synchrotron-radiation Renninger scan for InP(006) bulk
material is taken as the standard to analyse the effects of both the
polarization factor and diffracted-beam path length. The polarization of
the synchrotron-radiation beam is considered using a matrix approach.
The diffracted-beam path length involved in the surface secondary beam
cases is analysed taking into account the dynamical theory for perfect
crystals and the kinematical theory as the limit of the dynamical case
for thin crystals. Renninger scans of AlGaInAs quaternary layer
structures, simulated with the MULTX program, show a very good agreement (R = 0.085) with the corresponding experimental data.
