%0 Conference Paper %1 conf/essderc/AlshahedAHBWBL16 %A Alshahed, Muhammad %A Alomari, Mohammed %A Harendt, Christine %A Burghartz, Joachim N. %A Wachter, C. %A Bergunde, T. %A Lutgen, S. %B ESSDERC %D 2016 %I IEEE %K dblp %P 202-205 %T 600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. %U http://dblp.uni-trier.de/db/conf/essderc/essderc2016.html#AlshahedAHBWBL16 %@ 978-1-5090-2969-3

@inproceedings{conf/essderc/AlshahedAHBWBL16, added-at = {2019-05-01T00:00:00.000+0200}, author = {Alshahed, Muhammad and Alomari, Mohammed and Harendt, Christine and Burghartz, Joachim N. and Wachter, C. and Bergunde, T. and Lutgen, S.}, biburl = {https://www.bibsonomy.org/bibtex/290348e93162a308f18c6b39c18b2fb71/dblp}, booktitle = {ESSDERC}, crossref = {conf/essderc/2016}, ee = {https://doi.org/10.1109/ESSDERC.2016.7599621}, interhash = {d41bbd0dc53b0e7484e3ba592725d426}, intrahash = {90348e93162a308f18c6b39c18b2fb71}, isbn = {978-1-5090-2969-3}, keywords = {dblp}, pages = {202-205}, publisher = {IEEE}, timestamp = {2019-10-17T12:40:04.000+0200}, title = {600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates.}, url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2016.html#AlshahedAHBWBL16}, year = 2016 }