%0 Journal Article %1 10288483 %A Catania, Federica %A Saeedzadeh Khaanghah, Niloofar %A Corsino, Dianne %A Oliveira, Hugo de Souza %A Carrasco-Pena, Alejandro %A Ishida, Koichi %A Meister, Tilo %A Ellinger, Frank %A Cantarella, Giuseppe %A Münzenrieder, Niko %D 2023 %J IEEE Transactions on Electron Devices %K myown %N 12 %P 6359-6363 %R 10.1109/TED.2023.3323914 %T AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact %V 70 %X This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of $f_\,T$ and $f_\,MAX$ with a maximum relative tuning up to 130% for $f_\,T$ and 170% for $f_\,MAX$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.

@article{10288483, abstract = {This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of ${f}_{\,\text {T}}$ and ${f}_{\,\text {MAX}}$ with a maximum relative tuning up to 130% for ${f}_{\,\text {T}}$ and 170% for ${f}_{\,\text {MAX}}$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.}, added-at = {2023-12-21T09:25:19.000+0100}, author = {Catania, Federica and Saeedzadeh Khaanghah, Niloofar and Corsino, Dianne and Oliveira, Hugo de Souza and Carrasco-Pena, Alejandro and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/270ea20508dad638f139e251268071b74/nikomu}, doi = {10.1109/TED.2023.3323914}, interhash = {1e078a4fe11e0c4381f87a5a0ee4daed}, intrahash = {70ea20508dad638f139e251268071b74}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = dec, number = 12, pages = {6359-6363}, timestamp = {2023-12-21T09:25:19.000+0100}, title = {AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact}, volume = 70, year = 2023 }