%0 Conference Paper %1 conf/asicon/YanXYL11 %A Yan, Bing %A Xie, Yufeng %A Yuan, Rui %A Lin, Yinyin %B ASICON %D 2011 %I IEEE %K dblp %P 244-247 %T A BIST scheme for high-speed Gain Cell eDRAM. %U http://dblp.uni-trier.de/db/conf/asicon/asicon2011.html#YanXYL11 %@ 978-1-61284-192-2

@inproceedings{conf/asicon/YanXYL11, added-at = {2016-06-22T00:00:00.000+0200}, author = {Yan, Bing and Xie, Yufeng and Yuan, Rui and Lin, Yinyin}, biburl = {https://www.bibsonomy.org/bibtex/23d9a679380f886f0402b063fb18d52de/dblp}, booktitle = {ASICON}, crossref = {conf/asicon/2011}, ee = {http://dx.doi.org/10.1109/ASICON.2011.6157167}, interhash = {e209a50c0b8859b4e624080f0ee85f44}, intrahash = {3d9a679380f886f0402b063fb18d52de}, isbn = {978-1-61284-192-2}, keywords = {dblp}, pages = {244-247}, publisher = {IEEE}, timestamp = {2016-06-23T11:39:00.000+0200}, title = {A BIST scheme for high-speed Gain Cell eDRAM.}, url = {http://dblp.uni-trier.de/db/conf/asicon/asicon2011.html#YanXYL11}, year = 2011 }