An eight-contact phase change data router is described. This device comprises a phase-change-material forming a short-pipe geometry with four metal contacts at each end. The device is configured to facilitate connection or isolation between two input and two output terminals ( \$2 times 2\$ ) by amorphizing strips between pairs of “write” terminals. The short pipe geometry enables the implementation of a “swap” function in this 2-D thin-film device. The functionality of this device is demonstrated through 2-D electro-thermal simulations using Ge2Sb2Te5 parameters and field effect transistor access devices.
%0 Journal Article
%1 kanan2016phase
%A Kan'an, Nadim
%A Silva, Helena
%A Gokirmak, Ali
%D 2016
%J IEEE Journal of the Electron Devices Society
%K Multi-contact,Nonvolatile change logic,Phase logic,Router,Switch memory,Reconfigurable
%N 2
%P 72--75
%R 10.1109/JEDS.2016.2515026
%T Phase change pipe for nonvolatile routing
%V 4
%X An eight-contact phase change data router is described. This device comprises a phase-change-material forming a short-pipe geometry with four metal contacts at each end. The device is configured to facilitate connection or isolation between two input and two output terminals ( \$2 times 2\$ ) by amorphizing strips between pairs of “write” terminals. The short pipe geometry enables the implementation of a “swap” function in this 2-D thin-film device. The functionality of this device is demonstrated through 2-D electro-thermal simulations using Ge2Sb2Te5 parameters and field effect transistor access devices.
%@ 2015120084
@article{kanan2016phase,
abstract = {An eight-contact phase change data router is described. This device comprises a phase-change-material forming a short-pipe geometry with four metal contacts at each end. The device is configured to facilitate connection or isolation between two input and two output terminals ( {\$}2 times 2{\$} ) by amorphizing strips between pairs of “write” terminals. The short pipe geometry enables the implementation of a “swap” function in this 2-D thin-film device. The functionality of this device is demonstrated through 2-D electro-thermal simulations using Ge2Sb2Te5 parameters and field effect transistor access devices.},
added-at = {2019-01-03T22:40:30.000+0100},
author = {Kan'an, Nadim and Silva, Helena and Gokirmak, Ali},
biburl = {https://www.bibsonomy.org/bibtex/210d13363134d1d794f62810314e942ee/jjs027},
doi = {10.1109/JEDS.2016.2515026},
file = {:H$\backslash$:/Jake/Mendeley/Kan'an, Silva, Gokirmak - 2016 - Phase change pipe for nonvolatile routing.pdf:pdf},
interhash = {2218e50459214c6556bdf8ea2ceb17c1},
intrahash = {10d13363134d1d794f62810314e942ee},
isbn = {2015120084},
issn = {21686734},
journal = {IEEE Journal of the Electron Devices Society},
keywords = {Multi-contact,Nonvolatile change logic,Phase logic,Router,Switch memory,Reconfigurable},
number = 2,
pages = {72--75},
timestamp = {2019-01-03T22:45:29.000+0100},
title = {{Phase change pipe for nonvolatile routing}},
volume = 4,
year = 2016
}