%0 Journal Article %1 Yoshida1996 %A Yoshida, T. %D 1996 %J Diamond and Related Materials %K CVD; Growth Nucleation; PVD; cBN; %N 3--5 %P 501--507 %R doi:10.1016/0925-9635(96)80068-9 %T Vapour phase deposition of cubic boron nitride %V 5 %X This paper reviews the ?state-of-the-art? of the vapour phase deposition of cubic boron nitride (cBN) in terms of the nucleation and growth processes on ion bombardment, and provides an insight into the solution of the inherent disadvantages of ion-assisted processing for cBN deposition. To this end, current experimental and theoretical topics related to the vapour phase deposition of cBN are examined, and the initial growth stage is discussed in conjunction with recent findings derived from novel sputtering and plasma chemical vapour deposition. Finally, a qualitative growth scheme of cBN is proposed based on the concept of dynamic compressive strain, and research needs for the future development of cBN thin films are identified.

@article{Yoshida1996, abstract = {This paper reviews the ?state-of-the-art? of the vapour phase deposition of cubic boron nitride (cBN) in terms of the nucleation and growth processes on ion bombardment, and provides an insight into the solution of the inherent disadvantages of ion-assisted processing for cBN deposition. To this end, current experimental and theoretical topics related to the vapour phase deposition of cBN are examined, and the initial growth stage is discussed in conjunction with recent findings derived from novel sputtering and plasma chemical vapour deposition. Finally, a qualitative growth scheme of cBN is proposed based on the concept of dynamic compressive strain, and research needs for the future development of cBN thin films are identified.}, added-at = {2009-11-05T12:01:24.000+0100}, author = {Yoshida, T.}, biburl = {https://www.bibsonomy.org/bibtex/287a6cb948b300292af38f6aa0396627f/ghuot}, doi = {doi:10.1016/0925-9635(96)80068-9}, institution = {Department of Metallurgy and Materials Science, School of Engineering, Faculty of Engineering, The University of Tokyo, Hongou, Bunkyo-ku, Tokyo, 113, Japan}, interhash = {21f540ff6566e6dd7b471856a256dc66}, intrahash = {87a6cb948b300292af38f6aa0396627f}, journal = {Diamond and Related Materials}, keywords = {CVD; Growth Nucleation; PVD; cBN;}, number = {3--5}, owner = {Guillaume}, pages = {501--507}, timestamp = {2009-11-05T12:01:36.000+0100}, title = {Vapour phase deposition of cubic boron nitride}, volume = 5, year = 1996 }