%0 Journal Article %1 WOS:000179259900019 %A de Vasconcelos, TF %A Maia, FF %A Caetano, EWS %A Freire, VN %A da Costa, JAP %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2002 %I ELSEVIER SCIENCE BV %J JOURNAL OF CRYSTAL GROWTH %K III-V InN; anisotropy; carrier; effect; effective mass; materials} overshoot semiconducting wurtzite {band %N 3-4 %P 320-324 %R 10.1016/S0022-0248(02)01757-8 %T Band structure effects on the transient electron transport in wurtzite InN %V 246 %X The transient regime of electron transport in wurtzite InN subjected to applied electric fields in the Gamma-A and Gamma-M directions is calculated. The strength of the electron drift velocity overshoot effect is shown to be substantially dependent on the field direction, being stronger in the latter than in the former. This behavior is explained on the basis of the energy dependence of the band structure flattening, which is weaker in the Gamma-A than in the Gamma-M direction, and gives rise to a heavier average effective mass. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000179259900019, abstract = {The transient regime of electron transport in wurtzite InN subjected to applied electric fields in the Gamma-A and Gamma-M directions is calculated. The strength of the electron drift velocity overshoot effect is shown to be substantially dependent on the field direction, being stronger in the latter than in the former. This behavior is explained on the basis of the energy dependence of the band structure flattening, which is weaker in the Gamma-A than in the Gamma-M direction, and gives rise to a heavier average effective mass. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {de Vasconcelos, TF and Maia, FF and Caetano, EWS and Freire, VN and da Costa, JAP and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/22525e5ad84a7636bc5d1ccf8bba2402c/ppgfis_ufc_br}, doi = {10.1016/S0022-0248(02)01757-8}, interhash = {166410fff161c436ea1a7245cb9f0422}, intrahash = {2525e5ad84a7636bc5d1ccf8bba2402c}, issn = {0022-0248}, journal = {JOURNAL OF CRYSTAL GROWTH}, keywords = {III-V InN; anisotropy; carrier; effect; effective mass; materials} overshoot semiconducting wurtzite {band}, note = {2nd International Specialist Meeting on Bulk Nitride Growth and Related Techniques, AMAZONAS, BRAZIL, MAY 18-23, 2002}, number = {3-4}, pages = {320-324}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Band structure effects on the transient electron transport in wurtzite InN}, tppubtype = {article}, volume = 246, year = 2002 }