The conversion of the Si(111)-2 × 1 metastable cleavage structure to the stable Si(111)-7 × 7 structure was followed by measuring the LEED I/V spectra of the (00) spot as well as of superstructure spots of both structures in the range between 30 and 150 eV after anneals at temperatures up to 500°C for 10 min. The 2 × 1 structure directly transforms to the 7 × 7 structure with no intermediate structure. The conversion is first observed on the most wide cleavage steps after an anneal at 200°C. The activation barrier amounts to ΔG = 1.5eV. The structural conversion on the narrower treads occurs during anneals at higher temperatures.
Description
Cleaved Si(111) surfaces: Geometrical and annealing behaviour - ScienceDirect
%0 Journal Article
%1 AUER197945
%A Auer, P.P.
%A Mönch, W.
%D 1979
%J Surface Science
%K si(111)
%P 45 - 55
%R https://doi.org/10.1016/0039-6028(79)90662-9
%T Cleaved Si(111) surfaces: Geometrical and annealing behaviour
%U http://www.sciencedirect.com/science/article/pii/0039602879906629
%V 80
%X The conversion of the Si(111)-2 × 1 metastable cleavage structure to the stable Si(111)-7 × 7 structure was followed by measuring the LEED I/V spectra of the (00) spot as well as of superstructure spots of both structures in the range between 30 and 150 eV after anneals at temperatures up to 500°C for 10 min. The 2 × 1 structure directly transforms to the 7 × 7 structure with no intermediate structure. The conversion is first observed on the most wide cleavage steps after an anneal at 200°C. The activation barrier amounts to ΔG = 1.5eV. The structural conversion on the narrower treads occurs during anneals at higher temperatures.
@article{AUER197945,
abstract = {The conversion of the Si(111)-2 × 1 metastable cleavage structure to the stable Si(111)-7 × 7 structure was followed by measuring the LEED I/V spectra of the (00) spot as well as of superstructure spots of both structures in the range between 30 and 150 eV after anneals at temperatures up to 500°C for 10 min. The 2 × 1 structure directly transforms to the 7 × 7 structure with no intermediate structure. The conversion is first observed on the most wide cleavage steps after an anneal at 200°C. The activation barrier amounts to ΔG = 1.5eV. The structural conversion on the narrower treads occurs during anneals at higher temperatures.},
added-at = {2018-01-29T01:22:55.000+0100},
author = {Auer, P.P. and Mönch, W.},
biburl = {https://www.bibsonomy.org/bibtex/2252c87e0cb6c095d2949ac3852e79a53/maarten.leiden},
description = {Cleaved Si(111) surfaces: Geometrical and annealing behaviour - ScienceDirect},
doi = {https://doi.org/10.1016/0039-6028(79)90662-9},
interhash = {f15f18f01565b574ca07b7e47d8e9af0},
intrahash = {252c87e0cb6c095d2949ac3852e79a53},
issn = {0039-6028},
journal = {Surface Science},
keywords = {si(111)},
note = {The solid-vacuum interface V},
pages = {45 - 55},
timestamp = {2018-01-29T01:22:55.000+0100},
title = {Cleaved Si(111) surfaces: Geometrical and annealing behaviour},
url = {http://www.sciencedirect.com/science/article/pii/0039602879906629},
volume = 80,
year = 1979
}