Abstract
Theoretical results concerning the transmission properties of graded
GaAs/AlxGa1-xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are
presented. It is shown that the existence of nonabrupt interfaces shifts
the tunnelling resonances toward low energies, and is responsible for a
significant reduction in the splitting of the double resonant peaks. The
electric field effects on the transmission properties of GaAs/AlxGa1-xAs
DQW-TB also change when the existence of nonabrupt interfaces are
considered. (C) 1998 Elsevier Science B.V. All rights reserved.
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