In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
%0 Journal Article
%1 journals/bioinformatics/OrtellsCL93
%A Pankratov1, E.L.
%A 2, E.A. Bulaeva
%D 2014
%J International Journal of Recent Advances in Physics
%K Horizontal field-effect for manufacturing modelling of optimisation recommendations transistor
%N 2
%P 1-19
%R 10.14810/ijrap.2014.3205
%T AN APPROACH TO OPTIMIZE REGIMES OF MANUFACTURING OF COMPLEMENTARY HORIZONTAL FIELD-EFFECT TRANSISTOR
%U http://wireilla.com/physics/ijrap/papers/3214ijrap05.pdf
%V 3
%X In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
@article{journals/bioinformatics/OrtellsCL93,
abstract = { In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes. },
added-at = {2018-04-19T07:54:23.000+0200},
author = {Pankratov1, E.L. and 2, E.A. Bulaeva},
biburl = {https://www.bibsonomy.org/bibtex/2503dc8a6a7f529d4ee54f65075e75add/johnkenadi1985.},
doi = {10.14810/ijrap.2014.3205},
ee = {http://dx.doi.org/10.1093/bioinformatics/9.6.741},
interhash = {bfeec4988ecd9e79b2edfd598a89f07e},
intrahash = {503dc8a6a7f529d4ee54f65075e75add},
issn = {2201-1056},
journal = {International Journal of Recent Advances in Physics},
keywords = {Horizontal field-effect for manufacturing modelling of optimisation recommendations transistor},
language = {english},
number = 2,
pages = {1-19},
timestamp = {2018-04-19T07:54:23.000+0200},
title = {AN APPROACH TO OPTIMIZE REGIMES OF MANUFACTURING OF COMPLEMENTARY HORIZONTAL FIELD-EFFECT TRANSISTOR },
url = {http://wireilla.com/physics/ijrap/papers/3214ijrap05.pdf},
volume = 3,
year = 2014
}