%0 Journal Article %1 journals/iet-cds/PasandiP18 %A Pasandi, Ghasem %A Pedram, Massoud %D 2018 %J IET Circuits Devices Syst. %K dblp %N 4 %P 460-466 %T Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs. %U http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds12.html#PasandiP18 %V 12

@article{journals/iet-cds/PasandiP18, added-at = {2020-12-29T00:00:00.000+0100}, author = {Pasandi, Ghasem and Pedram, Massoud}, biburl = {https://www.bibsonomy.org/bibtex/2524332f70712b169504918bd8c6347ab/dblp}, ee = {https://doi.org/10.1049/iet-cds.2017.0227}, interhash = {8a7b901eb83e21a4c8476f8ac1ff16b7}, intrahash = {524332f70712b169504918bd8c6347ab}, journal = {IET Circuits Devices Syst.}, keywords = {dblp}, number = 4, pages = {460-466}, timestamp = {2024-04-08T16:07:08.000+0200}, title = {Internal write-back and read-before-write schemes to eliminate the disturbance to the half-selected cells in SRAMs.}, url = {http://dblp.uni-trier.de/db/journals/iet-cds/iet-cds12.html#PasandiP18}, volume = 12, year = 2018 }