%0 Journal Article %1 Sugino98 %A Sugino, T. %A Tanioka, K. %A Kawasaki, S. %A Shirafuji, J. %D 1998 %J Diamond and Related Materials %K imported %N 2-5 %P 632--635 %T Electron emission from nanocrystalline boron nitride films synthesized by plasma-assisted chemical vapor deposition %V 7 %X Boron nitride (BN) films were synthesized using BCl3 and N2 as source gases by plasma-assisted chemical vapor deposition (PACVD). The BN film consists of hexagonal grains of 3 nm in size. The energy gap is estimated to be as wide as 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is estimated to be 2 ? 1011 and 1.3 ? 102 Ømega cm for undoped and sulfur-doped BN films, respectively. The electron emission current is detected at electric fields higher than 9 V/m. The tunneling barrier height is estimated to be 0.1 eV from the Fowler-Nordheim (FN) plot. It is demonstrated that the electron emission characteristic of Si tip array is much improved by coating with BN film.

@article{Sugino98, abstract = {Boron nitride (BN) films were synthesized using BCl3 and N2 as source gases by plasma-assisted chemical vapor deposition (PACVD). The BN film consists of hexagonal grains of 3 nm in size. The energy gap is estimated to be as wide as 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is estimated to be 2 ? 1011 and 1.3 ? 102 \Omega cm for undoped and sulfur-doped BN films, respectively. The electron emission current is detected at electric fields higher than 9 V/\mu m. The tunneling barrier height is estimated to be 0.1 eV from the Fowler-Nordheim (FN) plot. It is demonstrated that the electron emission characteristic of Si tip array is much improved by coating with BN film.}, added-at = {2009-11-05T12:01:24.000+0100}, author = {Sugino, T. and Tanioka, K. and Kawasaki, S. and Shirafuji, J.}, biburl = {https://www.bibsonomy.org/bibtex/264846bac6405ea658076a59c8c83d981/ghuot}, interhash = {d491b669fd33cabe193274cffa57e322}, intrahash = {64846bac6405ea658076a59c8c83d981}, journal = {Diamond and Related Materials}, keywords = {imported}, number = {2-5}, owner = {Guillaume}, pages = {632--635}, timestamp = {2009-11-05T12:01:35.000+0100}, title = {Electron emission from nanocrystalline boron nitride films synthesized by plasma-assisted chemical vapor deposition}, volume = 7, year = 1998 }