Аннотация

We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized annealing of dopant and/or radiation defects.

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