Activation energy of metastable amorphous Ge \textlesssub\textgreater2\textless/sub\textgreater Sb \textlesssub\textgreater2\textless/sub\textgreater Te \textlesssub\textgreater5\textless/sub\textgreater from room temperature to melt
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K – 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ∼377 meV at ∼465 K and reaching zero at ∼930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ∼ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ∼ 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T...
%0 Journal Article
%1 muneer2018activation
%A Muneer, Sadid
%A Scoggin, Jake
%A Dirisaglik, Faruk
%A Adnane, Lhacene
%A Cywar, Adam
%A Bakan, Gokhan
%A Cil, Kadir
%A Lam, Chung
%A Silva, Helena
%A Gokirmak, Ali
%D 2018
%J AIP Advances
%K amorphous density,crystal s semiconductors,carrier
%N 6
%P 065314
%R 10.1063/1.5035085
%T Activation energy of metastable amorphous Ge \textlesssub\textgreater2\textless/sub\textgreater Sb \textlesssub\textgreater2\textless/sub\textgreater Te \textlesssub\textgreater5\textless/sub\textgreater from room temperature to melt
%U http://aip.scitation.org/doi/10.1063/1.5035085
%V 8
%X Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K – 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ∼377 meV at ∼465 K and reaching zero at ∼930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ∼ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ∼ 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T...
@article{muneer2018activation,
abstract = {Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K – 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ∼377 meV at ∼465 K and reaching zero at ∼930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ∼ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ∼ 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T...},
added-at = {2019-01-03T22:40:30.000+0100},
author = {Muneer, Sadid and Scoggin, Jake and Dirisaglik, Faruk and Adnane, Lhacene and Cywar, Adam and Bakan, Gokhan and Cil, Kadir and Lam, Chung and Silva, Helena and Gokirmak, Ali},
biburl = {https://www.bibsonomy.org/bibtex/281ebe73cfb66fb7a28f618a2dc3bd1be/jjs027},
doi = {10.1063/1.5035085},
file = {:H$\backslash$:/Jake/Mendeley/2018{\_}Muneer{\_}ActivationEnergyOfMetastableAmorphousGe2Sb2Te5FromRoomTemperatureToMelt.pdf:pdf},
interhash = {1df63edf5fcfe3d8b5d4194afb97ef4c},
intrahash = {81ebe73cfb66fb7a28f618a2dc3bd1be},
issn = {2158-3226},
journal = {AIP Advances},
keywords = {amorphous density,crystal s semiconductors,carrier},
number = 6,
pages = 065314,
timestamp = {2019-01-03T22:45:29.000+0100},
title = {{Activation energy of metastable amorphous Ge {\textless}sub{\textgreater}2{\textless}/sub{\textgreater} Sb {\textless}sub{\textgreater}2{\textless}/sub{\textgreater} Te {\textless}sub{\textgreater}5{\textless}/sub{\textgreater} from room temperature to melt}},
url = {http://aip.scitation.org/doi/10.1063/1.5035085},
volume = 8,
year = 2018
}