We report Raman scattering and low temperature photoluminescence
measurements performed on a series of Molecular-Beam-Epitaxy-grown
Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are
consistent with a gradual evolution of the Si/Ge interface which starts
with Ge segregation and formation of terraces for low Ge coverage, to
smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for
coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All
rights reserved.
%0 Journal Article
%1 WOS:000074907100009
%A Narvaez, GA
%A Araujo-Silva, MA
%A Cerdeira, F
%A Bean, JC
%C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
%D 1998
%I PERGAMON-ELSEVIER SCIENCE LTD
%J SOLID STATE COMMUNICATIONS
%K inelastic light luminescence} optical properties; scattering; wells; {quantum
%N 7
%P 359-362
%R 10.1016/S0038-1098(98)00222-1
%T On the cross-over between 2-dimensional and 3-dimensional growth in
Si/Ge-n/Si quantum wells
%V 107
%X We report Raman scattering and low temperature photoluminescence
measurements performed on a series of Molecular-Beam-Epitaxy-grown
Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are
consistent with a gradual evolution of the Si/Ge interface which starts
with Ge segregation and formation of terraces for low Ge coverage, to
smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for
coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All
rights reserved.
@article{WOS:000074907100009,
abstract = {We report Raman scattering and low temperature photoluminescence
measurements performed on a series of Molecular-Beam-Epitaxy-grown
Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are
consistent with a gradual evolution of the Si/Ge interface which starts
with Ge segregation and formation of terraces for low Ge coverage, to
smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for
coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All
rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
author = {Narvaez, GA and Araujo-Silva, MA and Cerdeira, F and Bean, JC},
biburl = {https://www.bibsonomy.org/bibtex/295fa61f8c43ca5a114be4c4982d19127/ppgfis_ufc_br},
doi = {10.1016/S0038-1098(98)00222-1},
interhash = {69d06e978b1b3425ec897f9a553bf25a},
intrahash = {95fa61f8c43ca5a114be4c4982d19127},
issn = {0038-1098},
journal = {SOLID STATE COMMUNICATIONS},
keywords = {inelastic light luminescence} optical properties; scattering; wells; {quantum},
number = 7,
pages = {359-362},
publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {On the cross-over between 2-dimensional and 3-dimensional growth in
Si/Ge-n/Si quantum wells},
tppubtype = {article},
volume = 107,
year = 1998
}