Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K
C. Swenson. Journal of Physical and Chemical Reference Data, 12 (2):
179--182(1983)
DOI: 10.1063/1.555681
Abstract
Silicon, a high melting point, low expansivity, cubic material which can be obtained readily in high purity form, provides an excellent thermal expansion standard. Various absolute determinations of the thermal expansivity of both single crystal and polycrystallinesilicon are used to establish a smooth relationship from 90 to 850 K which is believed to be reliable to roughly 10− 8 K− 1, and which is extrapolated to 1000 K. Values also are suggested for temperatures to absolute zero.
%0 Journal Article
%1 citeulike:13581527
%A Swenson, C. A.
%D 1983
%J Journal of Physical and Chemical Reference Data
%K 82d25-crystals 74f05-solid-mechanics-thermal-effects
%N 2
%P 179--182
%R 10.1063/1.555681
%T Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K
%U http://www.nist.gov/data/PDFfiles/jpcrd220.pdf
%V 12
%X Silicon, a high melting point, low expansivity, cubic material which can be obtained readily in high purity form, provides an excellent thermal expansion standard. Various absolute determinations of the thermal expansivity of both single crystal and polycrystallinesilicon are used to establish a smooth relationship from 90 to 850 K which is believed to be reliable to roughly 10− 8 K− 1, and which is extrapolated to 1000 K. Values also are suggested for temperatures to absolute zero.
@article{citeulike:13581527,
abstract = {{Silicon, a high melting point, low expansivity, cubic material which can be obtained readily in high purity form, provides an excellent thermal expansion standard. Various absolute determinations of the thermal expansivity of both single crystal and polycrystallinesilicon are used to establish a smooth relationship from 90 to 850 K which is believed to be reliable to roughly 10− 8 K− 1, and which is extrapolated to 1000 K. Values also are suggested for temperatures to absolute zero.}},
added-at = {2017-06-29T07:13:07.000+0200},
author = {Swenson, C. A.},
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citeulike-linkout-0 = {http://dx.doi.org/10.1063/1.555681},
citeulike-linkout-1 = {http://www.nist.gov/data/PDFfiles/jpcrd220.pdf},
comment = {(private-note)cited by sam MSR-246},
doi = {10.1063/1.555681},
file = {swenson_83_recommended.pdf},
interhash = {45dcba59c3d0593b3e2135863757fe8e},
intrahash = {999346bb4570dd9b69ece4a499919ce9},
journal = {Journal of Physical and Chemical Reference Data},
keywords = {82d25-crystals 74f05-solid-mechanics-thermal-effects},
number = 2,
pages = {179--182},
posted-at = {2015-04-14 05:06:10},
priority = {2},
timestamp = {2019-04-16T07:27:22.000+0200},
title = {Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 {K}},
url = {http://www.nist.gov/data/PDFfiles/jpcrd220.pdf},
volume = 12,
year = 1983
}