Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe2 monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon emission from the bright states, resulting in creation of hot (unequilibrated) excitons whose rapid expansion leads to a transient increase of the diffusion coefficient by more than one order of magnitude. These findings are relevant for both fundamental understanding of the spatio-temporal exciton dynamics in atomically thin materials as well as their technological application by enabling rapid diffusion.
Description
Non-equilibrium diffusion of dark excitons in atomically thin semiconductors - Nanoscale (RSC Publishing) DOI:10.1039/D1NR06230A
%0 Journal Article
%1 D1NR06230A
%A Rosati, Roberto
%A Wagner, Koloman
%A Brem, Samuel
%A Perea-Causín, Raül
%A Ziegler, Jonas D.
%A Zipfel, Jonas
%A Taniguchi, Takashi
%A Watanabe, Kenji
%A Chernikov, Alexey
%A Malic, Ermin
%D 2021
%I The Royal Society of Chemistry
%J Nanoscale
%K c
%N 47
%P 19966-19972
%R 10.1039/D1NR06230A
%T Non-equilibrium diffusion of dark excitons in atomically thin semiconductors
%U http://dx.doi.org/10.1039/D1NR06230A
%V 13
%X Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe2 monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon emission from the bright states, resulting in creation of hot (unequilibrated) excitons whose rapid expansion leads to a transient increase of the diffusion coefficient by more than one order of magnitude. These findings are relevant for both fundamental understanding of the spatio-temporal exciton dynamics in atomically thin materials as well as their technological application by enabling rapid diffusion.
@article{D1NR06230A,
abstract = {Atomically thin semiconductors provide an excellent platform to study intriguing many-particle physics of tightly-bound excitons. In particular, the properties of tungsten-based transition metal dichalcogenides are determined by a complex manifold of bright and dark exciton states. While dark excitons are known to dominate the relaxation dynamics and low-temperature photoluminescence, their impact on the spatial propagation of excitons has remained elusive. In our joint theory-experiment study, we address this intriguing regime of dark state transport by resolving the spatio-temporal exciton dynamics in hBN-encapsulated WSe2 monolayers after resonant excitation. We find clear evidence of an unconventional, time-dependent diffusion during the first tens of picoseconds, exhibiting strong deviation from the steady-state propagation. Dark exciton states are initially populated by phonon emission from the bright states, resulting in creation of hot (unequilibrated) excitons whose rapid expansion leads to a transient increase of the diffusion coefficient by more than one order of magnitude. These findings are relevant for both fundamental understanding of the spatio-temporal exciton dynamics in atomically thin materials as well as their technological application by enabling rapid diffusion.},
added-at = {2023-03-23T15:04:42.000+0100},
author = {Rosati, Roberto and Wagner, Koloman and Brem, Samuel and Perea-Causín, Raül and Ziegler, Jonas D. and Zipfel, Jonas and Taniguchi, Takashi and Watanabe, Kenji and Chernikov, Alexey and Malic, Ermin},
biburl = {https://www.bibsonomy.org/bibtex/2a21b3c5cb7fea0ece8d86939ef6a7375/ctqmat},
day = 16,
description = {Non-equilibrium diffusion of dark excitons in atomically thin semiconductors - Nanoscale (RSC Publishing) DOI:10.1039/D1NR06230A},
doi = {10.1039/D1NR06230A},
interhash = {cfc44aa1e10d980dc4ca2f2e8c153fb1},
intrahash = {a21b3c5cb7fea0ece8d86939ef6a7375},
journal = {Nanoscale},
keywords = {c},
month = {11},
number = 47,
pages = {19966-19972},
publisher = {The Royal Society of Chemistry},
timestamp = {2023-03-23T15:04:42.000+0100},
title = {Non-equilibrium diffusion of dark excitons in atomically thin semiconductors},
url = {http://dx.doi.org/10.1039/D1NR06230A},
volume = 13,
year = 2021
}