We study the optomechanical properties of stoichiometric SiN resonators
through a combination of spectroscopic and interferometric imaging techniques.
At room temperature, we demonstrate ultrahigh quality factors of $5 \times
10^7$ and a $f Q$ product of $1 10^14$ Hz that, to our
knowledge, correspond to the largest values yet reported for mesoscopic
flexural resonators. Through a comprehensive study of the limiting dissipation
mechanisms as a function of resonator and substrate geometry, we identify
radiation loss through the supporting substrate as the dominant loss process.
In addition to pointing the way towards higher quality factors through
optimized substrate designs, our work realizes an enabling platform for the
observation and control of quantum behavior in a macroscopic mechanical system
coupled to a room temperature bath.
Description
[1311.1234] Dissipation in ultrahigh quality factor SiN membrane resonators
%0 Generic
%1 chakram2013dissipation
%A Chakram, S.
%A Patil, Y. S.
%A Chang, L.
%A Vengalattore, M.
%D 2013
%K membrane quality-factor
%T Dissipation in ultrahigh quality factor SiN membrane resonators
%U http://arxiv.org/abs/1311.1234
%X We study the optomechanical properties of stoichiometric SiN resonators
through a combination of spectroscopic and interferometric imaging techniques.
At room temperature, we demonstrate ultrahigh quality factors of $5 \times
10^7$ and a $f Q$ product of $1 10^14$ Hz that, to our
knowledge, correspond to the largest values yet reported for mesoscopic
flexural resonators. Through a comprehensive study of the limiting dissipation
mechanisms as a function of resonator and substrate geometry, we identify
radiation loss through the supporting substrate as the dominant loss process.
In addition to pointing the way towards higher quality factors through
optimized substrate designs, our work realizes an enabling platform for the
observation and control of quantum behavior in a macroscopic mechanical system
coupled to a room temperature bath.
@misc{chakram2013dissipation,
abstract = {We study the optomechanical properties of stoichiometric SiN resonators
through a combination of spectroscopic and interferometric imaging techniques.
At room temperature, we demonstrate ultrahigh quality factors of $5 \times
10^7$ and a $f \times Q$ product of $1 \times 10^{14}$ Hz that, to our
knowledge, correspond to the largest values yet reported for mesoscopic
flexural resonators. Through a comprehensive study of the limiting dissipation
mechanisms as a function of resonator and substrate geometry, we identify
radiation loss through the supporting substrate as the dominant loss process.
In addition to pointing the way towards higher quality factors through
optimized substrate designs, our work realizes an enabling platform for the
observation and control of quantum behavior in a macroscopic mechanical system
coupled to a room temperature bath.},
added-at = {2014-01-20T17:09:50.000+0100},
author = {Chakram, S. and Patil, Y. S. and Chang, L. and Vengalattore, M.},
biburl = {https://www.bibsonomy.org/bibtex/2a5f43d74932d9401564453dc2337f1af/jacksankey},
description = {[1311.1234] Dissipation in ultrahigh quality factor SiN membrane resonators},
interhash = {11c80ca219cb2f8e6b3995c9987263f7},
intrahash = {a5f43d74932d9401564453dc2337f1af},
keywords = {membrane quality-factor},
note = {cite arxiv:1311.1234},
timestamp = {2014-01-20T17:09:50.000+0100},
title = {Dissipation in ultrahigh quality factor SiN membrane resonators},
url = {http://arxiv.org/abs/1311.1234},
year = 2013
}