A new microcalorimeter for measuring heat capacity of thin films in
the range 1.5�800 K is described. Semiconductor processing techniques
are used to create a device with an amorphous silicon nitride membrane
as the sample substrate, a Pt thin film resistor for temperatures
greater than 40 K, and either a thin film amorphous Nb�Si or a novel
boron-doped polycrystalline silicon thermometer for lower temperatures.
The addenda of the device, including substrate, is 4�10 -6 J/K at
room temperature and 2�10-9 J/K at 4.3 K, approximately two orders
of magnitude less than any existing calorimeter used for measuring
thin films. The device is capable of measuring the heat capacity
of thin film samples as small as a few micrograms.
%0 Journal Article
%1 Denlinger1994
%A Denlinger, D. W.
%A Abarra, E. N.
%A Allen, Kimberly
%A Rooney, P. W.
%A Messer, M. T.
%A Watson, S. K.
%A Hellman, F.
%D 1994
%I AIP
%J Review of Scientific Instruments
%K 013 04001000 1365 273400 65273 CALORIMETERS; DESIGN, FILMS; HEAT; K; RANGE SPECIFIC TEMPERATURE THIN microcalorimetry, science, sensor; surface
%N 4
%P 946-959
%R 10.1063/1.1144925
%T Thin film microcalorimeter for heat capacity measurements from 1.5
to 800 K
%U http://link.aip.org/link/?RSI/65/946/1
%V 65
%X A new microcalorimeter for measuring heat capacity of thin films in
the range 1.5�800 K is described. Semiconductor processing techniques
are used to create a device with an amorphous silicon nitride membrane
as the sample substrate, a Pt thin film resistor for temperatures
greater than 40 K, and either a thin film amorphous Nb�Si or a novel
boron-doped polycrystalline silicon thermometer for lower temperatures.
The addenda of the device, including substrate, is 4�10 -6 J/K at
room temperature and 2�10-9 J/K at 4.3 K, approximately two orders
of magnitude less than any existing calorimeter used for measuring
thin films. The device is capable of measuring the heat capacity
of thin film samples as small as a few micrograms.
@article{Denlinger1994,
abstract = {A new microcalorimeter for measuring heat capacity of thin films in
the range 1.5�800 K is described. Semiconductor processing techniques
are used to create a device with an amorphous silicon nitride membrane
as the sample substrate, a Pt thin film resistor for temperatures
greater than 40 K, and either a thin film amorphous Nb�Si or a novel
boron-doped polycrystalline silicon thermometer for lower temperatures.
The addenda of the device, including substrate, is 4�10 -6 J/K at
room temperature and 2�10-9 J/K at 4.3 K, approximately two orders
of magnitude less than any existing calorimeter used for measuring
thin films. The device is capable of measuring the heat capacity
of thin film samples as small as a few micrograms.},
added-at = {2009-10-30T10:04:05.000+0100},
author = {Denlinger, D. W. and Abarra, E. N. and Allen, Kimberly and Rooney, P. W. and Messer, M. T. and Watson, S. K. and Hellman, F.},
biburl = {https://www.bibsonomy.org/bibtex/2a7575d950252f206761a6c0e3e54d0f0/jfischer},
doi = {10.1063/1.1144925},
interhash = {c5f5ece72b5c8b9ba460566b2d5b57b5},
intrahash = {a7575d950252f206761a6c0e3e54d0f0},
journal = {Review of Scientific Instruments},
keywords = {013 04001000 1365 273400 65273 CALORIMETERS; DESIGN, FILMS; HEAT; K; RANGE SPECIFIC TEMPERATURE THIN microcalorimetry, science, sensor; surface},
number = 4,
pages = {946-959},
publisher = {AIP},
timestamp = {2009-10-30T10:04:11.000+0100},
title = {Thin film microcalorimeter for heat capacity measurements from 1.5
to 800 K},
url = {http://link.aip.org/link/?RSI/65/946/1},
volume = 65,
year = 1994
}