THE SENSITIVITY OF RENNINGER SCAN INTENSITIES WITH A1 CONTENT IN
GA1-XALXAS/GAAS SAMPLES
J. SASAKI, C. CAMPOS, and L. CARDOSO. DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE
TECHNOLOGY, volume 262 of MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, page 259-263. PITTSBURGH, FUJI XEROX; HITACHI; MAT RES SOC; CO APPLICAT MECAN ELECTR CINEMA
ATOMIST; EASTMAN KODAK; ELECT POWER RES INST; FUJITSU; HUGHES RES LABS;
JAPAN BROADCASTING; JAPAN ELECTR OPT LAB, MATERIALS RESEARCH SOC, (1992)SYMP ON DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND
DEVICE TECHNOLOGY, AT THE 1992 SPRING MEETING OF THE MATERIALS RESEARCH
SOC, SAN FRANCISCO, CA, APR 26-MAY 01, 1992.
DOI: 10.1557/PROC-262-259
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE
TECHNOLOGY
year
1992
organization
FUJI XEROX; HITACHI; MAT RES SOC; CO APPLICAT MECAN ELECTR CINEMA
ATOMIST; EASTMAN KODAK; ELECT POWER RES INST; FUJITSU; HUGHES RES LABS;
JAPAN BROADCASTING; JAPAN ELECTR OPT LAB
SYMP ON DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND
DEVICE TECHNOLOGY, AT THE 1992 SPRING MEETING OF THE MATERIALS RESEARCH
SOC, SAN FRANCISCO, CA, APR 26-MAY 01, 1992
%0 Conference Paper
%1 WOS:A1992BW93X00036
%A SASAKI, JM
%A CAMPOS, C
%A CARDOSO, LP
%B DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE
TECHNOLOGY
%C PITTSBURGH
%D 1992
%E WEBER, S ASHOK and J CHEVALLIER and K SUMINO and E
%I MATERIALS RESEARCH SOC
%K imported
%P 259-263
%R 10.1557/PROC-262-259
%T THE SENSITIVITY OF RENNINGER SCAN INTENSITIES WITH A1 CONTENT IN
GA1-XALXAS/GAAS SAMPLES
%V 262
%@ 1-55899-157-3
@inproceedings{WOS:A1992BW93X00036,
added-at = {2022-05-23T20:00:14.000+0200},
address = {PITTSBURGH},
author = {SASAKI, JM and CAMPOS, C and CARDOSO, LP},
biburl = {https://www.bibsonomy.org/bibtex/2d3f8a46fafe6ff53327deb6ff46dbcec/ppgfis_ufc_br},
booktitle = {DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE
TECHNOLOGY},
doi = {10.1557/PROC-262-259},
editor = {WEBER, S {ASHOK and J CHEVALLIER and K SUMINO and E}},
interhash = {ad7fd2fec65c9a20119db107737c38b8},
intrahash = {d3f8a46fafe6ff53327deb6ff46dbcec},
isbn = {1-55899-157-3},
keywords = {imported},
note = {SYMP ON DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND
DEVICE TECHNOLOGY, AT THE 1992 SPRING MEETING OF THE MATERIALS RESEARCH
SOC, SAN FRANCISCO, CA, APR 26-MAY 01, 1992},
organization = {FUJI XEROX; HITACHI; MAT RES SOC; CO APPLICAT MECAN ELECTR CINEMA
ATOMIST; EASTMAN KODAK; ELECT POWER RES INST; FUJITSU; HUGHES RES LABS;
JAPAN BROADCASTING; JAPAN ELECTR OPT LAB},
pages = {259-263},
publisher = {MATERIALS RESEARCH SOC},
pubstate = {published},
series = {MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {THE SENSITIVITY OF RENNINGER SCAN INTENSITIES WITH A1 CONTENT IN
GA1-XALXAS/GAAS SAMPLES},
tppubtype = {inproceedings},
volume = 262,
year = 1992
}