%0 Journal Article %1 Akasaka1998 %A Akasaka, Tetsuya %A Kobayashi, Yasuyuki %A Ando, Seigo %A Kobayashi, Naoki %A Kumagai, Masami %D 1998 %J Journal of Crystal Growth %K GaN shape %P 72 - 77 %R DOI: 10.1016/S0022-0248(98)00172-9 %T Selective MOVPE of GaN and AlxGa1-xN with smooth vertical facets %U http://www.sciencedirect.com/science/article/B6TJ6-3X4W4JR-H/2/da8672944b324a8b5717c51ff00a894a %V 189-190 %X Selective metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlxGa1-xN was investigated as a function of growth conditions such as substrate temperature and partial pressure of NH3. GaN hexagonal microprisms (HMPs) with vertical facets were grown when the surface coverage of atomic nitrogen was rather low, while GaN hexagonal micro-pyramids with facets were grown when the surface coverage was higher. This is because the growth rate of a GaN surface is more sensitive to the nitrogen surface coverage than a surface. The GaN HMPs have atomically smooth top surfaces because the growth mode is a balance between adsorption and desorption of film forming precursors and also because of the finite-area effect. HMPs and stripes of Al0.05Ga0.95N with smooth vertical facets were also fabricated. Stimulated emission was observed at room temperature from photopumped GaN HMPs 50 mum in diameter. The longitudinal modes having a 0.33 nm separation indicate an inscribed hexagonal optical path in the GaN HMP.

@article{Akasaka1998, abstract = {Selective metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlxGa1-xN was investigated as a function of growth conditions such as substrate temperature and partial pressure of NH3. GaN hexagonal microprisms (HMPs) with vertical facets were grown when the surface coverage of atomic nitrogen was rather low, while GaN hexagonal micro-pyramids with facets were grown when the surface coverage was higher. This is because the growth rate of a GaN surface is more sensitive to the nitrogen surface coverage than a surface. The GaN HMPs have atomically smooth top surfaces because the growth mode is a balance between adsorption and desorption of film forming precursors and also because of the finite-area effect. HMPs and stripes of Al0.05Ga0.95N with smooth vertical facets were also fabricated. Stimulated emission was observed at room temperature from photopumped GaN HMPs 50 [mu]m in diameter. The longitudinal modes having a 0.33 nm separation indicate an inscribed hexagonal optical path in the GaN HMP.}, added-at = {2010-08-19T14:24:58.000+0200}, author = {Akasaka, Tetsuya and Kobayashi, Yasuyuki and Ando, Seigo and Kobayashi, Naoki and Kumagai, Masami}, biburl = {https://www.bibsonomy.org/bibtex/2e6f32eb6726d7062d17e11aafbe667cd/pmd}, description = {ScienceDirect - Journal of Crystal Growth : Selective MOVPE of GaN and AlxGa1−xN with smooth vertical facets}, doi = {DOI: 10.1016/S0022-0248(98)00172-9}, file = {Akasaka1998.pdf:Akasaka1998.pdf:PDF}, groups = {public}, interhash = {4a464db3347b52c37f08f7c9e7d2d1ee}, intrahash = {e6f32eb6726d7062d17e11aafbe667cd}, issn = {0022-0248}, journal = {Journal of Crystal Growth}, keywords = {GaN shape}, pages = {72 - 77}, timestamp = {2011-09-27T11:20:02.000+0200}, title = {Selective MOVPE of GaN and AlxGa1-xN with smooth vertical facets}, url = {http://www.sciencedirect.com/science/article/B6TJ6-3X4W4JR-H/2/da8672944b324a8b5717c51ff00a894a}, username = {pmd}, volume = {189-190}, year = 1998 }