Article,
Measurement of the Surface Electrical Resistance of SnO2:F Thin Films
BOHR International Journal of Computer Science, 1 (1): 134--139 (2022)
DOI: 10.54646/bijcs.018
Abstract
In this work, thin films of tin oxide doped with fluorine and of nominal surface resistance between 30 Ω
and 40 Ω were deposited by RF sputtering in a plasma deposition system and their surface electrical resistances
were evaluated for different conditions. To measure the resistivity of the fluorine-doped tin oxide film using an
aluminum PAD with the same thickness and the same width as the film, a Minipa digital multimeter acting as an
ammeter, a DC voltage source, and wires with banana-alligator connectors were used at six intervals (between the
aluminum measuring tips and the PADs). Thus, a linear approximation and verification of the resistance value for
each measured distance were undertaken. Resistances ranging from 44.10 Ω/ to 88.10 Ω/ for separations of 6 and
1 cm, respectively, were found. With the values obtained, the respective graphs were plotted for the six separations.
The four-point method was employed to obtain four measurements (M1 to M4), and the curves of voltage as a
function of the current were obtained. Values of resistance ranged from 11.4 Ω (M4) to 29.1 Ω (M3).
