%0 Journal Article %1 WOS:000182700700095 %A Lemos, V %A Barros, EB %A Freire, VN %A Goncalves, JR %A Mendes, J %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2003 %I ELSEVIER %J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES %K Raman dynamics; effects} interface scattering; {lattice %N 1-4 %P 266-269 %R 10.1016/S1386-9477(02)00793-2 %T Lattice dynamic properties of interfaced InAs/GaAs superlattices %V 17 %X The effect of interfaces in several InGaAs/GaAs SLs with In content x = 0.3 and 1, were studied. Interface thickness of 0, 1, 2 and 3 MLs wore considered. The Raman spectra for x = 0.3 evolves from a two peaks feature to a single peak with increasing the interface thickness. The x = 1 SLs Raman spectra change considerably by interfacing. Two weak features in the abrupt SL are observed to enhanced as the interface thickness is increased from one to three monolayers. The atomic displacements calculation reveals that most of the Raman modes of the InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes the case of interfaces with thickness of 3 MLs. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000182700700095, abstract = {The effect of interfaces in several InGaAs/GaAs SLs with In content x = 0.3 and 1, were studied. Interface thickness of 0, 1, 2 and 3 MLs wore considered. The Raman spectra for x = 0.3 evolves from a two peaks feature to a single peak with increasing the interface thickness. The x = 1 SLs Raman spectra change considerably by interfacing. Two weak features in the abrupt SL are observed to enhanced as the interface thickness is increased from one to three monolayers. The atomic displacements calculation reveals that most of the Raman modes of the InGaAs/GaAs or the InAs/GaAs SLs are extended or quasi-extended modes the case of interfaces with thickness of 3 MLs. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Lemos, V and Barros, EB and Freire, VN and Goncalves, JR and Mendes, J}, biburl = {https://www.bibsonomy.org/bibtex/296f5dc7377422251468d15f8118c6707/ppgfis_ufc_br}, doi = {10.1016/S1386-9477(02)00793-2}, interhash = {36464c4edbd449e1f2861f610e9ce115}, intrahash = {96f5dc7377422251468d15f8118c6707}, issn = {1386-9477}, journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, keywords = {Raman dynamics; effects} interface scattering; {lattice}, note = {International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002}, number = {1-4}, pages = {266-269}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Lattice dynamic properties of interfaced InAs/GaAs superlattices}, tppubtype = {article}, volume = 17, year = 2003 }