Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications.
@article{journals/mr/ZhangKOIMOSYHH15,
added-at = {2020-11-12T00:00:00.000+0100},
author = {Zhang, Li and Koike, Mitsuo and Ono, Mizuki and Itai, Shogo and Matsuzawa, Kazuya and Ono, Syotaro and Saito, Wataru and Yamaguchi, Masakazu and Hayase, Yohei and Hara, Keiryo},
biburl = {https://www.bibsonomy.org/bibtex/2e0e685c46c74a582844ba9bbca54156e/dblp},
ee = {https://doi.org/10.1016/j.microrel.2015.06.142},
interhash = {440e1f7c2a984d47b0611a69c4d14599},
intrahash = {e0e685c46c74a582844ba9bbca54156e},
journal = {Microelectron. Reliab.},
keywords = {dblp},
number = {9-10},
pages = {1559-1563},
timestamp = {2020-11-13T11:35:29.000+0100},
title = {Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr55.html#ZhangKOIMOSYHH15},
volume = 55,
year = 2015
}