Аннотация
The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.
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