%0 Journal Article %1 noauthororeditor %A Cherian, Annmol %A Augustine, Ajay %A Jose, Jemy %A Pangracious, Vinod %D 2011 %J International Journal of Advanced Information Technology (IJAIT) %K 3D 3Dmemory TSV Thermal effects integration %N 4 %P 30-45 %R 10.5121/ijait.2011.1403 %T A NOVEL METHODLOGY FOR THERMAL ANANALYSIS & 3-DIMENSIONAL MEMORY INTEGRATION %U http://airccse.org/journal/IJAIT/papers/0811ijait03.pdf %V 1 %X The semiconductor industry is reaching a fascinating confluence in several evolutionary trends that will likely lead to a number of revolutionary changes in the design, implementation, scaling, and the use of computer systems. However, recently Moore’s law has come to a stand-still since device scaling beyond 65 nm is not practical. 2D integration has problems like memory latency, power dissipation, and large foot-print. 3D technology comes as a solution to the problems posed by 2D integration. The utilization of 3D is limited by the problem of temperature crisis. It is important to develop an accurate power profile extraction methodology to design 3D structure. In this paper, design of 3D integration of memory is considered and hence the static power dissipation of the memory cell is analysed in transistor level and is used to accurately model the inter-layer thermal effects for 3D memory stack. Subsequently, packaging of the chip is considered and modelled using an architecture level simulator. This modelling is intended to analyse the thermal effects of 3D memory, its reliability and lifetime of the chip, with greater accuracy.

@article{noauthororeditor, abstract = {The semiconductor industry is reaching a fascinating confluence in several evolutionary trends that will likely lead to a number of revolutionary changes in the design, implementation, scaling, and the use of computer systems. However, recently Moore’s law has come to a stand-still since device scaling beyond 65 nm is not practical. 2D integration has problems like memory latency, power dissipation, and large foot-print. 3D technology comes as a solution to the problems posed by 2D integration. The utilization of 3D is limited by the problem of temperature crisis. It is important to develop an accurate power profile extraction methodology to design 3D structure. In this paper, design of 3D integration of memory is considered and hence the static power dissipation of the memory cell is analysed in transistor level and is used to accurately model the inter-layer thermal effects for 3D memory stack. Subsequently, packaging of the chip is considered and modelled using an architecture level simulator. This modelling is intended to analyse the thermal effects of 3D memory, its reliability and lifetime of the chip, with greater accuracy. }, added-at = {2019-08-06T08:09:22.000+0200}, author = {Cherian, Annmol and Augustine, Ajay and Jose, Jemy and Pangracious, Vinod}, biburl = {https://www.bibsonomy.org/bibtex/26132afc5e4a9d2ba661f614ab85da75d/ijaitislive}, doi = {10.5121/ijait.2011.1403}, interhash = {4e3821b337352eb43af8481c733021e2}, intrahash = {6132afc5e4a9d2ba661f614ab85da75d}, issn = {2231 - 1548 [Online] ; 2231 - 1920 [Print]}, journal = {International Journal of Advanced Information Technology (IJAIT)}, keywords = {3D 3Dmemory TSV Thermal effects integration}, language = {English}, month = {August}, number = 4, pages = {30-45}, timestamp = {2019-08-06T08:09:22.000+0200}, title = {A NOVEL METHODLOGY FOR THERMAL ANANALYSIS & 3-DIMENSIONAL MEMORY INTEGRATION }, url = {http://airccse.org/journal/IJAIT/papers/0811ijait03.pdf}, volume = 1, year = 2011 }