%0 Journal Article %1 PSSB_245_641 %A Yan, Yanfa %A Wei, Su-Huai %D 2008 %I WILEY-VCH Verlag %J Phys. Status Solidi B %K Defects %N 4 %P 641--652 %R 10.1002/pssb.200743334 %T Doping asymmetry in wide-bandgap semiconductors: Origins and solutions %U http://dx.doi.org/10.1002/pssb.200743334 %V 245 %X Wide-bandgap (WBG) semiconductors are essential materials for making short-wavelength and transparent optoelectronic devices. However, a serious obstacle to realizing WBG semiconductor-based devices is their common doping asymmetry problem, i.e., a WBG semiconductor can be doped easily either p-type or n-type, but not both. This paper reviews the possible origins for doping asymmetry problems and updates our recent progress in searching for approaches to overcome the doping bottleneck in WBG semiconductors. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

@article{PSSB_245_641, abstract = {Wide-bandgap (WBG) semiconductors are essential materials for making short-wavelength and transparent optoelectronic devices. However, a serious obstacle to realizing WBG semiconductor-based devices is their common doping asymmetry problem, i.e., a WBG semiconductor can be doped easily either p-type or n-type, but not both. This paper reviews the possible origins for doping asymmetry problems and updates our recent progress in searching for approaches to overcome the doping bottleneck in WBG semiconductors. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}, added-at = {2012-10-01T23:42:46.000+0200}, author = {Yan, Yanfa and Wei, Su-Huai}, biburl = {https://www.bibsonomy.org/bibtex/27fef3207d3a43bcdfa2aa2e7a4e9a19f/chengguang}, description = {Doping asymmetry in wide-bandgap semiconductors: Origins and solutions - Yan - 2008 - physica status solidi (b) - Wiley Online Library}, doi = {10.1002/pssb.200743334}, file = {PSSB_245_641.pdf:JabRef\\PDF\\PSSB_245_641.pdf:PDF}, groups = {public}, interhash = {4f3dc2aeb3483c7bd314da92dcf92adb}, intrahash = {8c94c278c1af6280156111c350592ee9}, issn = {1521-3951}, journal = {Phys. Status Solidi B}, keywords = {Defects}, number = 4, pages = {641--652}, publisher = {WILEY-VCH Verlag}, timestamp = {2012-10-02T00:57:02.000+0200}, title = {Doping asymmetry in wide-bandgap semiconductors: Origins and solutions}, url = {http://dx.doi.org/10.1002/pssb.200743334}, username = {chengguang}, volume = 245, year = 2008 }