%0 Journal Article %1 WOS:000075867000053 %A Lima, MCA %A Farias, GA %A Freire, VN %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 1998 %I ELSEVIER %J MICROELECTRONIC ENGINEERING %K barriers; double interfaces} interfacial nonabrupt patterns; properties; transmission {GaAs/AlxGa1-xAs %P 371-375 %R 10.1016/S0167-9317(98)00187-7 %T The influence of interfacial growth patterns on the transmission of electrons through nonabrupt GaAs/AlxGa1-xAs double-barriers %V 43-4 %X It is investigated how the interfacial growth pattern changes the transmission properties of graded GaAs/AlxGa1-xAs double-barriers. Five interfacial growth patterns are studied, all of them representative of interfacial alloy variations that can be the result of different growth techniques and growth conditions of the interfaces. It is shown that the transmission resonances are shifted toward low energies in comparison to those of an abrupt GaAs/AlxGa1-xAs double-barriers. The shift increases with the interface width and with the order of the resonance, and depends on the type of growth pattern. (C) 1998 Elsevier Science BN. All rights reserved.

@article{WOS:000075867000053, abstract = {It is investigated how the interfacial growth pattern changes the transmission properties of graded GaAs/AlxGa1-xAs double-barriers. Five interfacial growth patterns are studied, all of them representative of interfacial alloy variations that can be the result of different growth techniques and growth conditions of the interfaces. It is shown that the transmission resonances are shifted toward low energies in comparison to those of an abrupt GaAs/AlxGa1-xAs double-barriers. The shift increases with the interface width and with the order of the resonance, and depends on the type of growth pattern. (C) 1998 Elsevier Science BN. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Lima, MCA and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/2b85970545c91144a159817069128716b/ppgfis_ufc_br}, doi = {10.1016/S0167-9317(98)00187-7}, interhash = {522781b9b2308451b573c444a0827e7c}, intrahash = {b85970545c91144a159817069128716b}, issn = {0167-9317}, journal = {MICROELECTRONIC ENGINEERING}, keywords = {barriers; double interfaces} interfacial nonabrupt patterns; properties; transmission {GaAs/AlxGa1-xAs}, note = {2nd International Conference on Low Dimensional Structures and Devices, LISBON, PORTUGAL, MAY 19-21, 1997}, pages = {371-375}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {The influence of interfacial growth patterns on the transmission of electrons through nonabrupt GaAs/AlxGa1-xAs double-barriers}, tppubtype = {article}, volume = {43-4}, year = 1998 }