%0 Journal Article %1 noauthororeditor %A "Pankratov", %A "Bulaeva", %D 2016 %J International Journal of Information Technology, Modeling and Computing (IJITMC) %K Diffusion-junction analytical approach area doped for heterorectifier implanted-junction modeling of overgrowth %N 2 %P 20 %R 10.5121/ijitmc.2016.4203 %T ON MODIFICATION OF PROPERTIES OF P-N-JUNCTIONS DURING OVERGROWTH %U http://aircconline.com/ijitmc/V4N2/4216ijitmc03.pdf %V 4 %X In this paper we consider influence of overgrowth of doped by diffusion and ion implantation areas of heterostructures on distributions of concentrations of dopants. Several conditions to increase sharpness of p-njunctions (single and framework bipolar transistors), which were manufactured during considered technological process, have been determined. At the same time we analyzed influence of speed of overgrowth of doped areas and mechanical stress in the considered heterostructure on distribution of concentrations of dopants in the structure.

@article{noauthororeditor, abstract = {In this paper we consider influence of overgrowth of doped by diffusion and ion implantation areas of heterostructures on distributions of concentrations of dopants. Several conditions to increase sharpness of p-njunctions (single and framework bipolar transistors), which were manufactured during considered technological process, have been determined. At the same time we analyzed influence of speed of overgrowth of doped areas and mechanical stress in the considered heterostructure on distribution of concentrations of dopants in the structure. }, added-at = {2017-12-18T13:19:27.000+0100}, author = {"Pankratov" and "Bulaeva"}, biburl = {https://www.bibsonomy.org/bibtex/220cfd95241fae3c2568731b9e8a368eb/ijitmc}, doi = {10.5121/ijitmc.2016.4203}, interhash = {5685d3a236e8510af78c1c97347c2035}, intrahash = {20cfd95241fae3c2568731b9e8a368eb}, journal = {International Journal of Information Technology, Modeling and Computing (IJITMC) }, keywords = {Diffusion-junction analytical approach area doped for heterorectifier implanted-junction modeling of overgrowth}, month = may, number = 2, pages = 20, timestamp = {2017-12-18T13:19:27.000+0100}, title = {ON MODIFICATION OF PROPERTIES OF P-N-JUNCTIONS DURING OVERGROWTH}, url = {http://aircconline.com/ijitmc/V4N2/4216ijitmc03.pdf}, volume = 4, year = 2016 }