%0 Journal Article %1 aircc2016analyzed %A E.L. Pankratov, E.A. Bulaeva %D 2016 %E AIRCC, %J International Journal of Recent advances in Physics (IJRAP) %K tag %N 1 %P 1-18 %T We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized annealing of dopant and/or radiation defects %U http://wireilla.com/physics/ijrap/papers/5116ijrap01.pdf %V 5 %X We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized annealing of dopant and/or radiation defects.

@article{aircc2016analyzed, abstract = {We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized annealing of dopant and/or radiation defects. }, added-at = {2018-01-24T11:16:12.000+0100}, author = {E.L. Pankratov, E.A. Bulaeva}, biburl = {https://www.bibsonomy.org/bibtex/2dd743aaee3a161db62e7cb1ee6c04678/johnkenadi1985.}, editor = {AIRCC}, interhash = {5c0b9918b634712c302c35821eb08f78}, intrahash = {dd743aaee3a161db62e7cb1ee6c04678}, journal = {International Journal of Recent advances in Physics (IJRAP)}, keywords = {tag}, month = {02/2016}, number = 1, pages = {1-18}, timestamp = {2018-01-24T11:16:12.000+0100}, title = {We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized annealing of dopant and/or radiation defects}, url = {http://wireilla.com/physics/ijrap/papers/5116ijrap01.pdf}, volume = 5, year = 2016 }