%0 Journal Article %1 Antonov2004 %A Antonov, A. V. %A Gavrilenko, V. I. %A Demidov, E. V. %A Morozov, S. V. %A Dubinov, A. A. %A Lusakowski, J. %A Knap, W. %A Dyakonova, N. %A Kaminska, E. %A Piotrowska, A. %A Golaszewska, K. %A Shur, M. S. %D 2004 %J Physics of the Solid State %K %N 1 %P 146--149 %R 10.1134/1.1641941 %T Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas %V 46 %X The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transistors stems from the possibility of developing terahertz-range radiation detectors and generators on the basis of these devices. Measurements of the value and the magnetic-field dependence of the drain-source resistance are used to estimate the electron density and mobility in the transistor channel. Results of magnetotransport measurements are employed to interpret the nonresonant detection observed in transistors with a gate width from 0.8 to 2.5 mum. (C) 2004 MAIK "Nauka / Interperiodica".

@article{Antonov2004, abstract = {The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transistors stems from the possibility of developing terahertz-range radiation detectors and generators on the basis of these devices. Measurements of the value and the magnetic-field dependence of the drain-source resistance are used to estimate the electron density and mobility in the transistor channel. Results of magnetotransport measurements are employed to interpret the nonresonant detection observed in transistors with a gate width from 0.8 to 2.5 mum. (C) 2004 MAIK "Nauka / Interperiodica".}, added-at = {2011-10-24T23:14:37.000+0200}, author = {Antonov, A. V. and Gavrilenko, V. I. and Demidov, E. V. and Morozov, S. V. and Dubinov, A. A. and Lusakowski, J. and Knap, W. and Dyakonova, N. and Kaminska, E. and Piotrowska, A. and Golaszewska, K. and Shur, M. S.}, biburl = {https://www.bibsonomy.org/bibtex/2ca6cf685bf49f1145d2b37cae5942a3b/jabreftest}, cl = {NIZHNII NOVGOROD, RUSSIA}, ct = {Conference Dedicated to Oleg Vladimirovich Losev (1903-1942) - PioneerEOLEOLof Semiconductor Electronics}, cy = {MAR 17-20, 2003}, doi = {10.1134/1.1641941}, file = {:X\:\\THz_Polish\\2004_Antonov.pdf:PDF}, groups = {public}, interhash = {612ee2b1c1683ab21812468c1f910228}, intrahash = {ca6cf685bf49f1145d2b37cae5942a3b}, journal = {Physics of the Solid State}, keywords = {}, number = 1, pages = {146--149}, sn = {1063-7834}, tc = {11}, timestamp = {2011-10-24T23:14:37.000+0200}, title = {Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas}, username = {jabreftest}, ut = {WOS:000187964400034}, volume = 46, year = 2004, z9 = {11} }