%0 Journal Article %1 WOS:000183607400018 %A Lemos, V %C THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND %D 2003 %I ELSEVIER SCI LTD %J MICROELECTRONICS JOURNAL %K Raman nitrides} scattering; {superlattices; %N 5-8 %P 395-399 %R 10.1016/S0026-2692(03)00033-8 %T Lattice dynamics in wide band gap materials based superlattices %V 34 %X Lattice dynamics calculations in zinc blende group III nitrides superlattices were carried out assuming the existence of interface regions with variable thickness. The acoustic frequencies were observed to remain practically unchanged for all values of interface thickness from one to three monolayers. The dispersion relation, Raman spectrum and the atomic displacements of optical modes were found to be greatly affected by interfacing. Several Raman peaks shift toward the center position of the spectrum with increasing interface thickness. As a consequence, some of the Raman frequencies become quasi-coincident giving rise to highly prominent structures in the middle range spectrum. Effects of localization of atomic displacements at the interface regions are shown. (C) 2003 Elsevier Science Ltd. All rights reserved.

@article{WOS:000183607400018, abstract = {Lattice dynamics calculations in zinc blende group III nitrides superlattices were carried out assuming the existence of interface regions with variable thickness. The acoustic frequencies were observed to remain practically unchanged for all values of interface thickness from one to three monolayers. The dispersion relation, Raman spectrum and the atomic displacements of optical modes were found to be greatly affected by interfacing. Several Raman peaks shift toward the center position of the spectrum with increasing interface thickness. As a consequence, some of the Raman frequencies become quasi-coincident giving rise to highly prominent structures in the middle range spectrum. Effects of localization of atomic displacements at the interface regions are shown. (C) 2003 Elsevier Science Ltd. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND}, author = {Lemos, V}, biburl = {https://www.bibsonomy.org/bibtex/28c8f099176249f06f795d4f512aefcb3/ppgfis_ufc_br}, doi = {10.1016/S0026-2692(03)00033-8}, interhash = {677d9d55491b1976be4c2e4bcb96ea17}, intrahash = {8c8f099176249f06f795d4f512aefcb3}, issn = {0026-2692}, journal = {MICROELECTRONICS JOURNAL}, keywords = {Raman nitrides} scattering; {superlattices;}, note = {Conference on Low Dimensional Structures and Devices (LDSD), FORTALEZA, BRAZIL, DEC 08-13, 2002}, number = {5-8}, pages = {395-399}, publisher = {ELSEVIER SCI LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Lattice dynamics in wide band gap materials based superlattices}, tppubtype = {article}, volume = 34, year = 2003 }