Article,

Massive and topological surface states in tensile-strained HgTe

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Nano Lett., 21 (23): 9869--9874 (Nov 23, 2021)
DOI: 10.1021/acs.nanolett.1c02456

Abstract

Magneto-transport measurements on gated high-mobility heterostructures containing a 60 nm layer of tensile-strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k·p calculations that the p-type transport results from massive Volkov–Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov–Pankratov states at the relevant gate voltages.

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