Abstract
The role of graded interfaces on the carrier confinement and exciton
properties of wurtzite InxGa1-xN/GaN quantum dots is investigated. The
internal electric field inside the dot generated by the spontaneous and
piezoelectric polarizations is considered, as well as the existence of
graded interfaces, which reduces the strain. It is shown that the
existence of graded interfaces enhances appreciably the energies-of the
confined carriers and excitons. Graded interface related blueshifts of
the electron-heavy hole confined exciton energy is demonstrated to be as
high as 150 meV for quantum dot sizes ranging from 30 to 96 Angstrom and
interface thicknesses varying from 5 to 15 Angstrom. (C) 2002 Elsevier
Science B.V. All rights reserved.
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