%0 Journal Article %1 CAO03 %A Cao, Y. G. %A Xie, M. H. %A Liu, Y. %A Xu, S. H. %A Ng, Y. F. %A Wu, H. S. %A Tong, S. Y. %D 2003 %J Phys.~Rev.~B %K III-V compounds compounds; epitaxial gallium indium island layers; nucleation; semiconductor semiconductors; structure; %N 16 %P 161304 %T Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy %V 68

@article{CAO03, added-at = {2009-03-03T17:19:04.000+0100}, author = {Cao, Y. G. and Xie, M. H. and Liu, Y. and Xu, S. H. and Ng, Y. F. and Wu, H. S. and Tong, S. Y.}, biburl = {https://www.bibsonomy.org/bibtex/23a4b270d34612f7f272c2a3cf954c03f/bronckobuster}, eid = {161304}, interhash = {78a0a728eb966cded06c7c330b1cce30}, intrahash = {3a4b270d34612f7f272c2a3cf954c03f}, journal = {Phys.~Rev.~B}, keywords = {III-V compounds compounds; epitaxial gallium indium island layers; nucleation; semiconductor semiconductors; structure;}, nota = {RK:}, number = 16, numpages = {4}, pages = 161304, timestamp = {2009-03-03T17:19:12.000+0100}, title = {Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy}, volume = 68, year = 2003 }