Article,
Obtaining Sensitive Materials that Sense Light and Temperature
CENTRAL ASIAN JOURNAL OF THEORETICAL AND APPLIED SCIENCE, 4 (8): 85-91 (August 2023)
Abstract
Mechanical treatment (cutting, physical and chemical cleaning, polishing) of semiconductor Si<B>-based material, introduction of Mn(Manganese) atoms through diffusion, formation of nanoclusters of various sizes and thus light and obtaining a sensitive material that senses temperature. Nanoclusters are materials in the transition from atomic properties to bulk material properties. Since it is possible to create new properties by obtaining nanoclusters of different sizes, by alloying Mn(Manganese) atoms to the Si<B>-based material at different temperatures, forming nanoclusters of different sizes, and studying their electrophysical parameters, light and temperature sensors is created. This work aims to calculate the infrared sensitivity of compensated silicon on IKS-21 and Hall effect measurement devices, generate graphic images and analyze them. The Mn atom was exposed to the KDB-3 element by diffusion, and a graph was created to determine its IR sensitivity at the nitrogen temperature of the IKS-21 device 1-7. To calculate the electrical and physical parameters of the compensated silicon, the results were obtained in Hall effect measurement devices. The results of the experiments show that the number of manganese atoms is influenced by the specific resistance and conductivity of the sample, and that the properties of the infrared ray sensed alloy sample are p-type, ranging from 1.5–102 u.s.m. to 4–104 u.s.m. The sensitivity of the n-type sample was not observed regardless of any value of. The observation of such phenomena in obtained samples depends on the selection of the first samples used for the formation of the nano cluster 8.
