%0 Journal Article %1 journals/ibmrd/AntoniadisAC06 %A Antoniadis, Dimitri A. %A Åberg, Ingvar %A Chléirigh, Cáit Ní %A Nayfeh, Osama M. %A Khaki-Firooz, Ali %A Hoyt, Judy L. %D 2006 %J IBM Journal of Research and Development %K %N 4-5 %P 363-376 %T Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. %U http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06 %V 50

@article{journals/ibmrd/AntoniadisAC06, added-at = {2023-12-13T02:58:26.000+0100}, author = {Antoniadis, Dimitri A. and Åberg, Ingvar and Chléirigh, Cáit Ní and Nayfeh, Osama M. and Khaki-Firooz, Ali and Hoyt, Judy L.}, biburl = {https://www.bibsonomy.org/bibtex/2f7dfae16769f195f8ef8eb915f7e8831/admin}, ee = {http://dx.doi.org/10.1147/rd.504.0363}, interhash = {85f57a010f1b18d2e1a8a0957c469708}, intrahash = {f7dfae16769f195f8ef8eb915f7e8831}, journal = {IBM Journal of Research and Development}, keywords = {}, number = {4-5}, pages = {363-376}, timestamp = {2023-12-13T02:58:26.000+0100}, title = {Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.}, url = {http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06}, volume = 50, year = 2006 }